ICSCRM is the premier global forum for technical discussion in all areas of silicon carbide (SiC) and related materials, such as other wide bandgap (WBG) semiconductors. The topics covered in the 19th ICSCRM include bulk growth and wafer manufacturing, characterization, devices, quantum technology, processing, packaging and applications, reliability, as well as related materials and respective cross-disciplinary topics.

In addition to the scientific conference, a Technical Exhibition for companies and agencies that provide materials, devices, equipment, other technologies and information relevant to the research and development efforts in the present areas is held.

Overall, ICSCRM aims at providing a discussion platform for academic and industrial contributions to the further development of SiC and its applications, for accomplished and world-renowned experts and young students at the beginning of their career alike.